This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.     In this book, we bring together numerous experts in the field to  review progress in SiC and GaN electronic devices and novel  detectors. Professor Morkoc reviews the growth and characterization of  nitrides, followed by chapters from Professor Shur, Professor  Karmalkar, and Professor Gaska on High Electron Mobility Transistors,  Professor Pearton and co-workers on ultra-high breakdown voltage  GaN-based rectifiers and the group of Professor Abernathy on emerging  MOS devices in the nitride system. Dr Baca from Sandia National  Laboratories and Dr Chang from Agilent review the use of mixed group  V-nitrides as the base layer in novel Heterojunction Bipolar  Transistors. There are 3 chapters on SiC, including Professor  Skowronski on growth and characterization, Professor Chow on power  Schottky and pin rectifiers and Professor Cooper on power  MOSFETs. Professor Dupuis and Professor Campbell give an overview of  short wavelength, nitride based detectors. Finally, Jihyun Kim and  co-workers describe recent progress in wide bandgap semiconductor  spintronics where one can obtain room temperature ferromagnetism and  exploit the spin of the electron in addition to its charge.

Wide Energy Bandgap Electronic Devices PDF

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